ایجاد اکسیتونها و پلاریتونها در مادۀ نیمههادی گالیم ارسناید

Abstract

In gallium arsenide single-layer structures, the discontinuity of the capacitance band and the conduction band in the direction of growth is such that a quantum well is formed in the capacitance or conduction band at the location of the layer. If we somehow energize the electrons of the capacitance band, then they will be able to leave the capacitance band and go into the conduction band, so a hole in the capacitance band has a positive charge and an electron that is in the conduction band has a negative charge. Will be, therefore, the hole and the electron are paired together and form an excitons. If the excitons are given photons at certain frequencies, then the exciting will pair with the photon, thus forming a polariton. Photon and polariton both have an electronic field which is checked by Lager-Gauss and Hermit-Gauss equations, therefore, in excitons, hole and electron pair together, and in polaritons, exciton pairs with photon. If the photons of Lager-Gauss rays are coupled with excitons, they create rotating fields, therefore rotating fields are common and widespread natural phenomena, the formation of the rotating field pattern in a wide range of phenomena such as superconductors, superfluids and Bose-Einstein condensation, etc. can be described. In the strong coupling regime, the quantum well exciton (electron-hole bound state in the quantum well) and the cavity photon in the structure consisting of alternating dielectric materials (of the gallium arsenide family) are coupled with each other and the resulting polariton-exciton quasiparticle Build.